Advancing Silicon Carbide Electronics Know-how I: Steel Contacts to Silicon Carbide: Physics, Know-how, Purposes (Supplies Analysis Foundations)

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The quickly advancing Silicon Carbide expertise has an ideal potential in excessive temperature and excessive frequency electronics. Excessive thermal stability and excellent chemical inertness make SiC a superb materials for high-power, low-loss semiconductor units. The current quantity presents the cutting-edge of SiC machine fabrication and characterization. Subjects coated embrace: SiC floor cleansing and etching strategies; electrical characterization strategies and processing of ohmic contacts to silicon carbide; evaluation of contact resistivity dependence on materials properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and check construction design; overview of various metallization schemes and processing applied sciences; thermal stability of ohmic contacts to SiC, their safety and compatibility with machine processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC supplies; expertise and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; purposes of SiC Schottky diodes in energy electronics and temperature/mild sensors; excessive energy SiC unipolar and bipolar switching units; several types of SiC units together with materials and expertise constraints on machine efficiency; purposes within the space of metallic contacts to silicon carbide; standing and prospects of SiC energy units.

Writer ‏ : ‎ Supplies Analysis Discussion board LLC; Illustrated version (September 25, 2018)
Language ‏ : ‎ English
Paperback ‏ : ‎ 250 pages
ISBN-10 ‏ : ‎ 1945291842
ISBN-13 ‏ : ‎ 978-1945291845
Merchandise Weight ‏ : ‎ 2.31 kilos
Dimensions ‏ : ‎ 6 x 0.53 x 9 inches